Parthasarathy Nayak, Sumit Pramanick, Kaushik Rajashekara. A High-Temperature Gate Driver for Silicon Carbide mosfet. IEEE Transactions on Industrial Electronics, 65(3):1955-1964, 2018. [doi]
@article{NayakPR18,
title = {A High-Temperature Gate Driver for Silicon Carbide mosfet},
author = {Parthasarathy Nayak and Sumit Pramanick and Kaushik Rajashekara},
year = {2018},
doi = {10.1109/TIE.2017.2745465},
url = {https://doi.org/10.1109/TIE.2017.2745465},
researchr = {https://researchr.org/publication/NayakPR18},
cites = {0},
citedby = {0},
journal = {IEEE Transactions on Industrial Electronics},
volume = {65},
number = {3},
pages = {1955-1964},
}