Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist

Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori. Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. IEICE Trans. Electron., 106(10):592-596, October 2023. [doi]

@article{NishiyamaKLMYKM23,
  title = {Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist},
  author = {Shimpei Nishiyama and Kimihiko Kato and Yongxun Liu and Raisei Mizokuchi and Jun Yoneda and Tetsuo Kodera and Takahiro Mori},
  year = {2023},
  month = {October},
  doi = {10.1587/transele.2022fus0002},
  url = {https://doi.org/10.1587/transele.2022fus0002},
  researchr = {https://researchr.org/publication/NishiyamaKLMYKM23},
  cites = {0},
  citedby = {0},
  journal = {IEICE Trans. Electron.},
  volume = {106},
  number = {10},
  pages = {592-596},
}