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FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process

Ernest E. S. Ong, M. Z. Abdullah, W. K. Loh, C. K. Ooi, R. Chan. FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process. Microelectronics Reliability, 53(4):600-611, 2013. [doi]

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