Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology

Sungkyung Park, Wonchan Kim. Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology. IEEE Trans. Consumer Electronics, 47(1):10-15, 2001. [doi]

@article{ParkK01-0,
  title = {Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology},
  author = {Sungkyung Park and Wonchan Kim},
  year = {2001},
  doi = {10.1109/30.920413},
  url = {http://dx.doi.org/10.1109/30.920413},
  researchr = {https://researchr.org/publication/ParkK01-0},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. Consumer Electronics},
  volume = {47},
  number = {1},
  pages = {10-15},
}