Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism - researchr publication authors

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Jongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae. Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

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