Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Gaudencio Paz-Martínez, Ignacio Iñiguez-de-la-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, Tomás González. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. Sensors, 22(4):1515, 2022. [doi]

@article{Paz-MartinezISN22,
  title = {Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs},
  author = {Gaudencio Paz-Martínez and Ignacio Iñiguez-de-la-Torre and Héctor Sánchez-Martín and José Antonio Novoa-López and Virginie Hoel and Yvon Cordier and Javier Mateos and Tomás González},
  year = {2022},
  doi = {10.3390/s22041515},
  url = {https://doi.org/10.3390/s22041515},
  researchr = {https://researchr.org/publication/Paz-MartinezISN22},
  cites = {0},
  citedby = {0},
  journal = {Sensors},
  volume = {22},
  number = {4},
  pages = {1515},
}