K. L. Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin. Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectronics Reliability, 43(9-11):1471-1476, 2003. [doi]
@article{PeyTRTSWL03,
title = {Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM},
author = {K. L. Pey and C. H. Tung and M. K. Radhakrishnan and L. J. Tang and Y. Sun and X. D. Wang and W. H. Lin},
year = {2003},
doi = {10.1016/S0026-2714(03)00261-0},
url = {http://dx.doi.org/10.1016/S0026-2714(03)00261-0},
tags = {C++},
researchr = {https://researchr.org/publication/PeyTRTSWL03},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {43},
number = {9-11},
pages = {1471-1476},
}