Role of junction depth in light emission from silicon p-i-n leds

Giulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz, Lis K. Nanver. Role of junction depth in light emission from silicon p-i-n leds. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 119-122, IEEE, 2013. [doi]

@inproceedings{PiccoloSHSN13,
  title = {Role of junction depth in light emission from silicon p-i-n leds},
  author = {Giulia Piccolo and Amir Sammak and Raymond J. E. Hueting and Jurriaan Schmitz and Lis K. Nanver},
  year = {2013},
  doi = {10.1109/ESSDERC.2013.6818833},
  url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818833},
  researchr = {https://researchr.org/publication/PiccoloSHSN13},
  cites = {0},
  citedby = {0},
  pages = {119-122},
  booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
  publisher = {IEEE},
}