Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs - researchr publication authors

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Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel. Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectronics Reliability, 51(9-11):1530-1534, 2011. [doi]

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