Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

T. Pompl, A. Kerber, M. Röhner, M. Kerber. Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. Microelectronics Reliability, 46(9-11):1603-1607, 2006. [doi]

Authors

T. Pompl

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A. Kerber

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M. Röhner

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M. Kerber

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