Cryogenic Transistor Confinement Well Simulation through Material and Carrier Transport Decoupling

Conor Power, Robert Bogdan Staszewski, Elena Blokhina. Cryogenic Transistor Confinement Well Simulation through Material and Carrier Transport Decoupling. In 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022, Glasgow, United Kingdom, October 24-26, 2022. pages 1-2, IEEE, 2022. [doi]

@inproceedings{PowerSB22,
  title = {Cryogenic Transistor Confinement Well Simulation through Material and Carrier Transport Decoupling},
  author = {Conor Power and Robert Bogdan Staszewski and Elena Blokhina},
  year = {2022},
  doi = {10.1109/ICECS202256217.2022.9970779},
  url = {https://doi.org/10.1109/ICECS202256217.2022.9970779},
  researchr = {https://researchr.org/publication/PowerSB22},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022, Glasgow, United Kingdom, October 24-26, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-8823-5},
}