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In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement

Shi Pu, Enes Ugur, Fei Yang 0006, Bilal Akin. In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement. IEEE Transactions on Industrial Electronics, 67(6):5092-5100, 2020. [doi]

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Shi Pu

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Enes Ugur

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Fei Yang 0006

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Bilal Akin

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