A microscopic physical description of RTN current fluctuations in HfOx RRAM

Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher. A microscopic physical description of RTN current fluctuations in HfOx RRAM. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 5, IEEE, 2015. [doi]

@inproceedings{PuglisiPVPBL15,
  title = {A microscopic physical description of RTN current fluctuations in HfOx RRAM},
  author = {Francesco Maria Puglisi and Paolo Pavan and Luca Vandelli and Andrea Padovani and Matteo Bertocchi and Luca Larcher},
  year = {2015},
  doi = {10.1109/IRPS.2015.7112746},
  url = {http://dx.doi.org/10.1109/IRPS.2015.7112746},
  researchr = {https://researchr.org/publication/PuglisiPVPBL15},
  cites = {0},
  citedby = {0},
  pages = {5},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7362-3},
}