High on/off current ratio in SB-CNTFET based on tuning the gate insulator parameters for different ambient temperatures

Amin Ghasemi Nejad Raeini, Zoheir Kordrostami, Mojtaba Javaheri. High on/off current ratio in SB-CNTFET based on tuning the gate insulator parameters for different ambient temperatures. In 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, Xi'an, China, April 7-11, 2015. pages 630-634, IEEE, 2015. [doi]

@inproceedings{RaeiniKJ15,
  title = {High on/off current ratio in SB-CNTFET based on tuning the gate insulator parameters for different ambient temperatures},
  author = {Amin Ghasemi Nejad Raeini and Zoheir Kordrostami and Mojtaba Javaheri},
  year = {2015},
  doi = {10.1109/NEMS.2015.7147509},
  url = {http://dx.doi.org/10.1109/NEMS.2015.7147509},
  researchr = {https://researchr.org/publication/RaeiniKJ15},
  cites = {0},
  citedby = {0},
  pages = {630-634},
  booktitle = {10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, Xi'an, China, April 7-11, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-6695-3},
}