Yi Ran, Wang Kang, Youguang Zhang, Jacques-Olivier Klein, Weisheng Zhao. Read disturbance issue for nanoscale STT-MRAM. In IEEE Non-Volatile Memory System and Applications Symposium, NVMSA 2015, Hong Kong, China, August 19-21, 2015. pages 1-6, IEEE, 2015. [doi]
@inproceedings{RanKZKZ15,
title = {Read disturbance issue for nanoscale STT-MRAM},
author = {Yi Ran and Wang Kang and Youguang Zhang and Jacques-Olivier Klein and Weisheng Zhao},
year = {2015},
doi = {10.1109/NVMSA.2015.7304372},
url = {http://dx.doi.org/10.1109/NVMSA.2015.7304372},
researchr = {https://researchr.org/publication/RanKZKZ15},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {IEEE Non-Volatile Memory System and Applications Symposium, NVMSA 2015, Hong Kong, China, August 19-21, 2015},
publisher = {IEEE},
isbn = {978-1-4673-6688-5},
}