Bhawna Rawat, Poornima Mittal. Single bit line accessed high-performance ultra-low voltage operating 7T static random access memory cell with improved read stability. I. J. Circuit Theory and Applications, 49(5):1435-1449, 2021. [doi]
@article{RawatM21,
title = {Single bit line accessed high-performance ultra-low voltage operating 7T static random access memory cell with improved read stability},
author = {Bhawna Rawat and Poornima Mittal},
year = {2021},
doi = {10.1002/cta.2960},
url = {https://doi.org/10.1002/cta.2960},
researchr = {https://researchr.org/publication/RawatM21},
cites = {0},
citedby = {0},
journal = {I. J. Circuit Theory and Applications},
volume = {49},
number = {5},
pages = {1435-1449},
}