WL-VC SRAM: a low leakage memory circuit for deep sub-micron design

G. Razavipour, A. Motamedi, Ali Afzali-Kusha. WL-VC SRAM: a low leakage memory circuit for deep sub-micron design. In International Symposium on Circuits and Systems (ISCAS 2006), 21-24 May 2006, Island of Kos, Greece. IEEE, 2006. [doi]

@inproceedings{RazavipourMA06,
  title = {WL-VC SRAM: a low leakage memory circuit for deep sub-micron design},
  author = {G. Razavipour and A. Motamedi and Ali Afzali-Kusha},
  year = {2006},
  doi = {10.1109/ISCAS.2006.1693065},
  url = {http://dx.doi.org/10.1109/ISCAS.2006.1693065},
  tags = {design},
  researchr = {https://researchr.org/publication/RazavipourMA06},
  cites = {0},
  citedby = {0},
  booktitle = {International Symposium on Circuits and Systems (ISCAS 2006), 21-24 May 2006, Island of Kos, Greece},
  publisher = {IEEE},
}