Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

Mariano A. Real, Eric A. Lass, Fan-Hung Liu, Tian Shen, George R. Jones, Johannes A. Soons, David B. Newell, Albert V. Davydov, Randolph E. Elmquist. Graphene Epitaxial Growth on SiC(0001) for Resistance Standards. IEEE T. Instrumentation and Measurement, 62(6):1454-1460, 2013. [doi]

@article{RealLLSJSNDE13,
  title = {Graphene Epitaxial Growth on SiC(0001) for Resistance Standards},
  author = {Mariano A. Real and Eric A. Lass and Fan-Hung Liu and Tian Shen and George R. Jones and Johannes A. Soons and David B. Newell and Albert V. Davydov and Randolph E. Elmquist},
  year = {2013},
  doi = {10.1109/TIM.2012.2225962},
  url = {http://dx.doi.org/10.1109/TIM.2012.2225962},
  researchr = {https://researchr.org/publication/RealLLSJSNDE13},
  cites = {0},
  citedby = {0},
  journal = {IEEE T. Instrumentation and Measurement},
  volume = {62},
  number = {6},
  pages = {1454-1460},
}