A novel APS pixel level rearrangement to increase the fill factor and SNR in 0.35μm CMOS technology - researchr publication authors

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Ali Baradaran Rezaeii, Faeze Noruzpur, Sina Mahdavi. A novel APS pixel level rearrangement to increase the fill factor and SNR in 0.35μm CMOS technology. In 24th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2017, Bydgoszcz, Poland, June 22-24, 2017. pages 205-210, IEEE, 2017. [doi]

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