A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions - researchr publication authors

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Nicola J. Rinaldi, Gian Domenico Licciardo, Luigi Di Benedetto, Mathias Rommel, Tobias Erlbacher. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions. In 18th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023, Valencia, Spain, June 18-21, 2023. pages 233-236, IEEE, 2023. [doi]

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