Using the EKV model to describe the DC operation in weak inversion of the multiple-input FGMOS transistor

Sergio Rios-Salcedo, A. S. Medina-Vazquez, C. Davila-Saldivar, M. A. Gurrola-Navarro. Using the EKV model to describe the DC operation in weak inversion of the multiple-input FGMOS transistor. In 23rd International Conference on Electronics, Communications and Computing, CONIELECOMP 2013, Cholula, Puebla, Mexico, March 11-13, 2013. pages 154-157, IEEE, 2013. [doi]

@inproceedings{Rios-SalcedoMDG13,
  title = {Using the EKV model to describe the DC operation in weak inversion of the multiple-input FGMOS transistor},
  author = {Sergio Rios-Salcedo and A. S. Medina-Vazquez and C. Davila-Saldivar and M. A. Gurrola-Navarro},
  year = {2013},
  doi = {10.1109/CONIELECOMP.2013.6525777},
  url = {http://dx.doi.org/10.1109/CONIELECOMP.2013.6525777},
  researchr = {https://researchr.org/publication/Rios-SalcedoMDG13},
  cites = {0},
  citedby = {0},
  pages = {154-157},
  booktitle = {23rd International Conference on Electronics, Communications and Computing, CONIELECOMP 2013, Cholula, Puebla, Mexico, March 11-13, 2013},
  publisher = {IEEE},
  isbn = {978-1-4673-6156-9},
}