Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

Ana Ruiz, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría. Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. IEEE Access, 9:90568-90576, 2021. [doi]

@article{RuizCSPGN21,
  title = {Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data},
  author = {Ana Ruiz and Carlos Couso and Natalia Seoane and Marc Porti and Antonio J. García-Loureiro and Montserrat Nafría},
  year = {2021},
  doi = {10.1109/ACCESS.2021.3090472},
  url = {https://doi.org/10.1109/ACCESS.2021.3090472},
  researchr = {https://researchr.org/publication/RuizCSPGN21},
  cites = {0},
  citedby = {0},
  journal = {IEEE Access},
  volume = {9},
  pages = {90568-90576},
}