Modeling and analysis of through silicon via: Electromagnetic and device simulation approach

K. Salah, Alaa El Rouby, Hani Ragai, Yehea I. Ismail. Modeling and analysis of through silicon via: Electromagnetic and device simulation approach. In 19th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2012, Seville, Spain, December 9-12, 2012. pages 825-828, IEEE, 2012. [doi]

Authors

K. Salah

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Alaa El Rouby

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Hani Ragai

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Yehea I. Ismail

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