Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

Nossikpendou Yves Sama, Hafsa Bouhnane, Simon Gautier, Ali Ahaitouf, Jean Michel Matray, Jean-Paul Salvestrini, Abdallah Ougazzaden, Andrew Hathcock, Dongyuan He, Thi Quynh Phuong Vuong, Soufiane Karrakchou, Taha Ayari, Adama Mballo, Chris Bishop, Yacine Halfaya. Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor. In 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019. pages 1-4, IEEE, 2019. [doi]

@inproceedings{SamaBGAMSOHHVKA19,
  title = {Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor},
  author = {Nossikpendou Yves Sama and Hafsa Bouhnane and Simon Gautier and Ali Ahaitouf and Jean Michel Matray and Jean-Paul Salvestrini and Abdallah Ougazzaden and Andrew Hathcock and Dongyuan He and Thi Quynh Phuong Vuong and Soufiane Karrakchou and Taha Ayari and Adama Mballo and Chris Bishop and Yacine Halfaya},
  year = {2019},
  doi = {10.1109/SENSORS43011.2019.8956762},
  url = {https://doi.org/10.1109/SENSORS43011.2019.8956762},
  researchr = {https://researchr.org/publication/SamaBGAMSOHHVKA19},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-1634-1},
}