Katia Samperi, Salvatore Pennisi, Francesco Pulvirenti, Giuseppe Palmisano. 1-mS constant-Gm GaN transconductor with embedded process compensation. In 17th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2022, Villasimius, SU, Italy, June 12-15, 2022. pages 73-76, IEEE, 2022. [doi]
@inproceedings{SamperiPPP22,
title = {1-mS constant-Gm GaN transconductor with embedded process compensation},
author = {Katia Samperi and Salvatore Pennisi and Francesco Pulvirenti and Giuseppe Palmisano},
year = {2022},
doi = {10.1109/PRIME55000.2022.9816807},
url = {https://doi.org/10.1109/PRIME55000.2022.9816807},
researchr = {https://researchr.org/publication/SamperiPPP22},
cites = {0},
citedby = {0},
pages = {73-76},
booktitle = {17th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2022, Villasimius, SU, Italy, June 12-15, 2022},
publisher = {IEEE},
isbn = {978-1-6654-6700-1},
}