High-temperature RF probe station for device characterization through 500°C and 50 GHz

Zachary D. Schwartz, Alan N. Downey, Samuel A. Alterovitz, George E. Ponchak. High-temperature RF probe station for device characterization through 500°C and 50 GHz. IEEE T. Instrumentation and Measurement, 54(1):369-376, 2005. [doi]

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