Sanghyun Seo, Kaustav Ghose, Guangyuan Zhao, Dimitris Pavlidis. AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate. IEICE Transactions, 91-C(7):994-1000, 2008. [doi]
@article{SeoGZP08,
title = {AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate},
author = {Sanghyun Seo and Kaustav Ghose and Guangyuan Zhao and Dimitris Pavlidis},
year = {2008},
doi = {10.1093/ietele/e91-c.7.994},
url = {http://dx.doi.org/10.1093/ietele/e91-c.7.994},
researchr = {https://researchr.org/publication/SeoGZP08},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {91-C},
number = {7},
pages = {994-1000},
}