Suruchi Sharma, Rikmantra Basu, Baljit Kaur. Performance Investigation of a Si/Ge Heterojunction Asymmetric Double Gate DLTFET Considering Temperature and ITC Variations. In 22nd International Symposium on Quality Electronic Design, ISQED 2021, Santa Clara, CA, USA, April 7-9, 2021. pages 314, IEEE, 2021. [doi]
@inproceedings{SharmaBK21-1,
title = {Performance Investigation of a Si/Ge Heterojunction Asymmetric Double Gate DLTFET Considering Temperature and ITC Variations},
author = {Suruchi Sharma and Rikmantra Basu and Baljit Kaur},
year = {2021},
doi = {10.1109/ISQED51717.2021.9424354},
url = {https://doi.org/10.1109/ISQED51717.2021.9424354},
researchr = {https://researchr.org/publication/SharmaBK21-1},
cites = {0},
citedby = {0},
pages = {314},
booktitle = {22nd International Symposium on Quality Electronic Design, ISQED 2021, Santa Clara, CA, USA, April 7-9, 2021},
publisher = {IEEE},
isbn = {978-1-7281-7641-3},
}