E. Shen, J. B. Kuo. 0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems. In ISCAS (4). pages 583-586, 2002. [doi]
@inproceedings{ShenK02,
title = {0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems},
author = {E. Shen and J. B. Kuo},
year = {2002},
doi = {10.1109/ISCAS.2002.1010523},
url = {http://doi.ieeecomputersociety.org/10.1109/ISCAS.2002.1010523},
tags = {tagging, e-science},
researchr = {https://researchr.org/publication/ShenK02},
cites = {0},
citedby = {0},
pages = {583-586},
booktitle = {ISCAS (4)},
}