Qian Shi, Zhaohao Wang, Yuqian Gao, Liang Chang, Wang Kang, Youguang Zhang, Weisheng Zhao. A spin Hall effect-based multi-level cell for MRAM. In IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016, Beijing, China, July 18-20, 2016. pages 143-144, ACM, 2016. [doi]
@inproceedings{ShiWGCKZZ16,
title = {A spin Hall effect-based multi-level cell for MRAM},
author = {Qian Shi and Zhaohao Wang and Yuqian Gao and Liang Chang and Wang Kang and Youguang Zhang and Weisheng Zhao},
year = {2016},
doi = {10.1145/2950067.2950104},
url = {http://dx.doi.org/10.1145/2950067.2950104},
researchr = {https://researchr.org/publication/ShiWGCKZZ16},
cites = {0},
citedby = {0},
pages = {143-144},
booktitle = {IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016, Beijing, China, July 18-20, 2016},
publisher = {ACM},
isbn = {978-1-4503-4330-5},
}