Hangning Shi, Ailun Yi, Jiaxin Ding, Xudong Liu, Qingcheng Qin, Juemin Yi, Junjie Hu, Miao Wang, Demin Cai, Jianfeng Wang, Ke Xu, Fengwen Mu, Tadatomo Suga, René Heller, Mao Wang, Shengqiang Zhou, Wenhui Xu, Kai Huang, Tiangui You, Xin Ou. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Science in China Series F: Information Sciences, 66(11), November 2023. [doi]
@article{ShiYDLQYHWCWXMSHWZXHYO23,
title = {Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology},
author = {Hangning Shi and Ailun Yi and Jiaxin Ding and Xudong Liu and Qingcheng Qin and Juemin Yi and Junjie Hu and Miao Wang and Demin Cai and Jianfeng Wang and Ke Xu and Fengwen Mu and Tadatomo Suga and René Heller and Mao Wang and Shengqiang Zhou and Wenhui Xu and Kai Huang and Tiangui You and Xin Ou},
year = {2023},
month = {November},
doi = {10.1007/s11432-022-3668-0},
url = {https://doi.org/10.1007/s11432-022-3668-0},
researchr = {https://researchr.org/publication/ShiYDLQYHWCWXMSHWZXHYO23},
cites = {0},
citedby = {0},
journal = {Science in China Series F: Information Sciences},
volume = {66},
number = {11},
}