Abhijit Sil, Magdy Bayoumi. A Bit-Interleaved 2-Port Subthreshold 6T SRAM Array with High Write-Ability and SNM-Free Read in 90 nm. J. Low Power Electronics, 7(1):96-109, 2011. [doi]
@article{SilB11,
title = {A Bit-Interleaved 2-Port Subthreshold 6T SRAM Array with High Write-Ability and SNM-Free Read in 90 nm},
author = {Abhijit Sil and Magdy Bayoumi},
year = {2011},
doi = {10.1166/jolpe.2011.1120},
url = {http://dx.doi.org/10.1166/jolpe.2011.1120},
researchr = {https://researchr.org/publication/SilB11},
cites = {0},
citedby = {0},
journal = {J. Low Power Electronics},
volume = {7},
number = {1},
pages = {96-109},
}