Stefan Slesazeck, H. Wylezich, Thomas Mikolajick. Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches. In 8th IEEE Latin American Symposium on Circuits & Systems, LASCAS 2017, Bariloche, Argentina, February 20-23, 2017. pages 1-4, IEEE, 2017. [doi]
@inproceedings{SlesazeckWM17,
title = {Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches},
author = {Stefan Slesazeck and H. Wylezich and Thomas Mikolajick},
year = {2017},
doi = {10.1109/LASCAS.2017.7948106},
url = {https://doi.org/10.1109/LASCAS.2017.7948106},
researchr = {https://researchr.org/publication/SlesazeckWM17},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {8th IEEE Latin American Symposium on Circuits & Systems, LASCAS 2017, Bariloche, Argentina, February 20-23, 2017},
publisher = {IEEE},
isbn = {978-1-5090-5859-4},
}