Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS - researchr publication authors

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Seung-Hyun Song, Jae-Chul Kim, Sung-Woo Jung, Yoon-Ha Jeong. Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS. IEICE Transactions, 91-C(5):761-766, 2008. [doi]

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