The simulation of resonant tunneling devices containing InAs quantum dots

J. Song, W. G. Ning, H. D. Lu, F. M. Guo. The simulation of resonant tunneling devices containing InAs quantum dots. In 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Sendai, Japan, April 17-20, 2016. pages 160-163, IEEE, 2016. [doi]

Authors

J. Song

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W. G. Ning

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H. D. Lu

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F. M. Guo

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