Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs

Michelly de Souza, Bruna Cardoso Paz, Denis Flandre, Marcelo Antonio Pavanello. Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. Microelectronics Reliability, 53(6):848-855, 2013. [doi]

@article{SouzaPFP13,
  title = {Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs},
  author = {Michelly de Souza and Bruna Cardoso Paz and Denis Flandre and Marcelo Antonio Pavanello},
  year = {2013},
  doi = {10.1016/j.microrel.2013.03.005},
  url = {http://dx.doi.org/10.1016/j.microrel.2013.03.005},
  researchr = {https://researchr.org/publication/SouzaPFP13},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {53},
  number = {6},
  pages = {848-855},
}