Simulated Analysis of Double-Gate MOSFET and FinFET Structure Using High-k Materials - researchr publication authors

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Pooja Srivastava, S. C. Bose. Simulated Analysis of Double-Gate MOSFET and FinFET Structure Using High-k Materials. In Nirbhay Chaubey, Satyen Parikh, Kiran Amin, editors, Computing Science, Communication and Security - Second International Conference, COMS2 2021, Gujarat, India, February 6-7, 2021, Revised Selected Papers. Volume 1416 of Communications in Computer and Information Science, pages 276-286, Springer, 2021. [doi]

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