Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device

A. Srivastava, R. K. Nahar, Chandan Kumar Sarkar, W. P. Singh, Y. Malhotra. Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device. Microelectronics Reliability, 51(4):751-755, 2011. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.