Universal Behavioural Model for SiC Power MOSFETs Under Forward Bias - researchr publication authors

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Andrii Stefanskyi, Lukasz Starzak, Andrzej Napieralski. Universal Behavioural Model for SiC Power MOSFETs Under Forward Bias. In 25th International Conference "Mixed Design of Integrated Circuits and System", MIXDES 2018, Gdynia, Poland, June 21-23, 2018. pages 343-348, IEEE, 2018. [doi]

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