Combined Effect of Grain Boundary Depletion and PolySi/Oxide Interface Depletion on Drain Characteristics of a p-MOSFET - researchr publication authors

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R. P. Suresh, P. Venugopal, S. Tamizh Selvam, S. Potla. Combined Effect of Grain Boundary Depletion and PolySi/Oxide Interface Depletion on Drain Characteristics of a p-MOSFET. In 9th International Conference on VLSI Design (VLSI Design 1996), 3-6 January 1996, Bangalore, India. pages 156-161, IEEE Computer Society, 1996. [doi]

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