Full-band simulation of p-type ultra-scaled silicon nanowire transistors

Aron Szabo, Mathieu Luisier. Full-band simulation of p-type ultra-scaled silicon nanowire transistors. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 77-80, IEEE, 2013. [doi]

@inproceedings{SzaboL13,
  title = {Full-band simulation of p-type ultra-scaled silicon nanowire transistors},
  author = {Aron Szabo and Mathieu Luisier},
  year = {2013},
  doi = {10.1109/ESSDERC.2013.6818823},
  url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818823},
  researchr = {https://researchr.org/publication/SzaboL13},
  cites = {0},
  citedby = {0},
  pages = {77-80},
  booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
  publisher = {IEEE},
}