Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors - researchr publication authors

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Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang. Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Science in China Series F: Information Sciences, 63(12), 2020. [doi]

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