Comparative evaluation of a commercially available 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module - researchr publication authors

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S. Tiwari, O.-M. Midtgard, T. M. Undeland. Comparative evaluation of a commercially available 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module. In IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, Florence, Italy, October 23-26, 2016. pages 1093-1098, IEEE, 2016. [doi]

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Sudarshan Tiwari

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