Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI

Guillaume Tochou, Andreia Cathelin, Antoine Frappé, Andreas Kaiser, Jan M. Rabaey. Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI. IEEE Trans. Circuits Syst. II Express Briefs, 69(1):50-54, 2022. [doi]

@article{TochouCFKR22,
  title = {Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI},
  author = {Guillaume Tochou and Andreia Cathelin and Antoine Frappé and Andreas Kaiser and Jan M. Rabaey},
  year = {2022},
  doi = {10.1109/TCSII.2021.3088996},
  url = {https://doi.org/10.1109/TCSII.2021.3088996},
  researchr = {https://researchr.org/publication/TochouCFKR22},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. Circuits Syst. II Express Briefs},
  volume = {69},
  number = {1},
  pages = {50-54},
}