Effect of thermal annealing in H2 atmosphere of SiCxOy films obtained by HFCVD technique - researchr publication authors

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Juan Carlos Pérez Trinidad, Marco Antonio Vasquez-Agustin, Godofredo García-Salgado, Román Romano-Trujillo, Fernando Lopez-Marcos, Heber Vilchis, Enrique Rosendo Andrés, José Juan Gervacio Arciniega, Orlando Cortazar Martínez, Antonio Coyopol Solís. Effect of thermal annealing in H2 atmosphere of SiCxOy films obtained by HFCVD technique. In 20th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2023, Mexico City, Mexico, October 25-27, 2023. pages 1-7, IEEE, 2023. [doi]

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