Shweta Tripathi, Satyabrata Jit. Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions. IET Circuits, Devices & Systems, 7(1), 2013. [doi]
@article{TripathiJ13,
title = {Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions},
author = {Shweta Tripathi and Satyabrata Jit},
year = {2013},
doi = {10.1049/iet-cds.2012.0145},
url = {http://dx.doi.org/10.1049/iet-cds.2012.0145},
researchr = {https://researchr.org/publication/TripathiJ13},
cites = {0},
citedby = {0},
journal = {IET Circuits, Devices & Systems},
volume = {7},
number = {1},
}