Pranav M. Tripathi, Harshit Soni, Rishu Chaujar, Ajay Kumar 0004. Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications. IET Circuits, Devices & Systems, 14(6):915-922, 2020. [doi]
@article{TripathiSCK20,
title = {Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications},
author = {Pranav M. Tripathi and Harshit Soni and Rishu Chaujar and Ajay Kumar 0004},
year = {2020},
doi = {10.1049/iet-cds.2020.0041},
url = {https://doi.org/10.1049/iet-cds.2020.0041},
researchr = {https://researchr.org/publication/TripathiSCK20},
cites = {0},
citedby = {0},
journal = {IET Circuits, Devices & Systems},
volume = {14},
number = {6},
pages = {915-922},
}