The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure - researchr publication authors

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Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina. The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectronics Reliability, 44(9-11):1407-1411, 2004. [doi]

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