On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories

Elisa Vianello, Carlo Cagli, Gabriel Molas, Emeline Souchier, P. Blaise, C. Carabasse, G. Rodriguez, V. Jousseaume, B. De Salvo, F. Longnos, F. Dahmani, P. Verrier, D. Bretegnier, J. Liebault. On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 278-281, IEEE, 2012. [doi]

@inproceedings{VianelloCMSBCRJSLDVBL12,
  title = {On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories},
  author = {Elisa Vianello and Carlo Cagli and Gabriel Molas and Emeline Souchier and P. Blaise and C. Carabasse and G. Rodriguez and V. Jousseaume and B. De Salvo and F. Longnos and F. Dahmani and P. Verrier and D. Bretegnier and J. Liebault},
  year = {2012},
  doi = {10.1109/ESSDERC.2012.6343387},
  url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343387},
  researchr = {https://researchr.org/publication/VianelloCMSBCRJSLDVBL12},
  cites = {0},
  citedby = {0},
  pages = {278-281},
  booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-1707-8},
}