High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations

Akio Wakejima, Kohji Matsunaga, Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Naotaka Kuroda, Masahiro Tanomura, Hironobu Miyamoto. High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations. IEICE Transactions, 90-C(5):929-936, 2007. [doi]

@article{WakejimaMANOOKTM07,
  title = {High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations},
  author = {Akio Wakejima and Kohji Matsunaga and Yuji Ando and Tatsuo Nakayama and Yasuhiro Okamoto and Kazuki Ota and Naotaka Kuroda and Masahiro Tanomura and Hironobu Miyamoto},
  year = {2007},
  doi = {10.1093/ietele/e90-c.5.929},
  url = {http://dx.doi.org/10.1093/ietele/e90-c.5.929},
  tags = {rule-based},
  researchr = {https://researchr.org/publication/WakejimaMANOOKTM07},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {90-C},
  number = {5},
  pages = {929-936},
}